Specifications
Form Factor
m.2 22110 (22mm × 110mm)
Pcie Generation
pcie Gen3 X4
CONTROLLER
SAMSUNG Polaris Nvme Controller
Nand Flash
SAMSUNG 3d V-nand Tlc
Target Application
enterprise / Data Center, Read-intensive
Sequential Read Speed
up To 3,100 Mb/s
Sequential Write Speed
Up To 2,000 Mb/s
Random Read (4kb, Qd32)
Up To 540,000 Iops
Random Write (4kb, Qd32)
Up To 50,000 Iops
Endurance
Enterprise-grade High Endurance (1.3 Dwpd / 3 Years)
Data Protection
Power Loss Protection (plp), End-to-end Data Path Protection
Encryption
Aes-256, Tcg Opal 2.0 Compliant